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參數(shù)資料
| 型號： | AMMC-5024-W10 |
| 元件分類： | 放大器 |
| 英文描述： | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.0925 X 0.0413 INCH, 0.004 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 361K |
| 代理商： | AMMC-5024-W10 |
8
Biasing and Operation
AMMC-5024isbiasedwithasinglepositivedrainsupply
(Vdd)anegativegatesupply(Vg1).Forbestoverallperfor-
mancetherecommendedbiasisVdd =7VandIdd=200
mA.Toachievethisdraincurrentlevel,Vg1istypically
between–2.5to–3.5V.Typically,DCcurrentflowforVg1
is–10mA.
TheAMMC-5024hasasecondgatebias(Vg2)thatmaybe
usedforgaincontrol.Whennotbeingutilized,Vg2should
beleftopen-circuited.
Thisfeaturefurtherenhancestheversatilityofapplica-
tions where variable gain over a broad bandwidth is
necessary.
Thissecondgatebias(Vg2)isconnectedtothegatesof
theupperFETsineachcascodestagethroughasmall
de-queingresistor.Theotherendofthegatelineistermi-
natedinanon-chipresistive/diodedividernetwork,which
allowsthesecondgatetoself-bias.Thus,withVg2left
open-circuited,thedraincurrentissetbythe(Vg1)gate
biasvoltageappliedtothelowerFETineachstage.
ThenominalopencircuitvoltageforVg2isapproximately
2volts.Underthisoperatingcondition,maximumgain
andpowerareachievedfromtheTWA.
Byapplyinganexternalvoltagetothesecondgatebias
(Vg2)lessthantheopen-circuitpotential,thedrainvolt-
ageonthelowerFETcanbedecreasedtoapointwhere
thelowerFETentersthelinearoperatingregion.This
reducesthecurrentdrawnbyeachstage.DecreasingVg2
furtherwillreducethedrainvoltageonthelowerFETto-
wardszerowhilepinchingofftheupperFETineachstage.
AtlargernegativevaluesofVg2(between0and-2.5volts)
thegainoftheTWAwilldecreasesignificantly.
Usingthesimplestformofassembly(Figure20),thedevice
iscapableofdeliveringflatgainovera2–50GHzrange
withaminimumofgainslopeandripple.However,this
deviceisdesignedwithDCcoupledRFI/Oports,and
operationmaybeextendedtolowerfrequencies(<2
GHz)throughtheuseofoff-chiplow-frequencyextension
circuitryandproperexternalbiasingcomponents.With
lowfrequencybiasextensionitmaybeusedinavariety
oftime-domainapplications(through40Gb/s).
Figure21showsatypicalassemblyconfiguration.
WhenbypasscapacitorsareconnectedtotheAUXpads,
thelowfrequencylimitisextendeddowntothecorner
frequencydeterminedbythebypasscapacitorandthe
combinationoftheon-chip50ohmloadandsmallde-
queingresistor.Atthisfrequencythesmallsignalgain
willincreaseinmagnitudeandstayatthiselevatedlevel
downtothepointwheretheCauxbypasscapacitoractsas
anopencircuit,effectivelyrollingoffthegaincompletely.
Thelowfrequencylimitcanbeapproximatedfromthe
followingequation:
fCaux =
1
2
πCaux(Ro + RDEQ)
where:
Roisthe50gateordrainlineterminationresistor.
RDEQisthesmallseriesde-queingresistorand10.
Cauxisthecapacitanceofthebypasscapacitorcon-
nectedtotheAUXDrainpadinfarads.
WiththeexternalbypasscapacitorsconnectedtotheAUX
gateandAUXdrainpads,gainwillshowaslightincrease
between1.0and1.5GHz.Thisisduetoaseriescombina-
tionofCauxandtheonchipresistancebutisexaggerated
bytheparasiticinductance(Lc)ofthebypasscapacitorand
theinductanceofthebondwire(Ld).Thereforethebond
wirefromtheAuxpadstothebypasscapacitorsshould
bemadeasshortaspossible.
InputandoutputRFportsareDCcoupled;therefore,DC
decouplingcapacitorsarerequiredifthereareDCpaths.
(Donotattempttoapplybiastothesepads.)
RFbondconnectionsshouldbekeptasshortaspossible
toreduceRFleadinductancewhichwilldegradeperfor-
manceabove20GHz.
Anoptionaloutputpowerdetectornetworkisalsopro-
vided.A>0.5FcapacitorisrequiredfortheDet_Out
padtoexpandpowerdetectionperformancebelow100
MHz.
Groundconnectionsaremadewithplatedthrough-holes
tothebacksideofthedevice;therefore,groundwiresare
notneeded.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5026 | 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5026 | 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5033-W10 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-5024-W50 | 功能描述:射頻放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-5025-W10 | 功能描述:射頻放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-5025-W50 | 功能描述:射頻放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-5026 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:2-35 GHz GaAs MMIC Traveling Wave Amplifier |
| AMMC-5026_08 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:2-35 GHz GaAs MMIC Traveling Wave Amplifier |
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