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參數(shù)資料
| 型號： | AMMC-6345-W50 |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.100 x 0.045 INCH, DIE-10 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 193K |
| 代理商： | AMMC-6345-W50 |
2
Absolute Maximum Ratings
Symbols
Parameters
Units
Minimum
Maximum
Notes
Vd-Vg
Drain to Gate Voltage
V
8
Vd
Positive Supply Voltage
V
5.5
Vg
Gate Supply Voltage
V
-2.5
0.5
Id
Drain Current
mA
TBD
2
PD
Power Dissipation
W
3.5
2 and 3
Pin
CW Input Power
dBm
23
2
Tch
Operating Channel Temp
qC
+150
4
Tstg
Storage Case Temp.
qC
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
qC
+320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations will signicantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly aect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
AMMC-6345 DC Specications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
(under any RF power drive and temperature)
(Vd=5.0V, Vg set for Id typical)
mA
480
600
Vg
Gate Supply Operating Voltage Id(Q) = 480mA
V
-0.75
-0.55
-0.4
Vp
Pinch-o voltage (Vdd=2.5V, Ids=20mA)
V
-1.2
Tch-b
Thermal Resistance [2] Backside temperature, Tb=25°C
°C/W
8.2
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (
Tch-b) = 9.0°C/W at Tchannel (Tc) = 70°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
PD = 3.5W
Tchannel = 150°C
Thermal Resistance (
Tjc)
Vd = 5V
Id = 480mA
PD = 2.4W
Tbaseplate = 85°C
Tjc = 8.2°C/W
Tchannel = 104°C
Thermal Resistance (
Tjc)
Under RF Drive
Vd = 5V
Id = 510mA
Pout = 24dBm
Pd = 2.3W
Tbaseplate = 85°C
Tjc = 8.2°C/W
Tchannel = 104°C
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