參數(shù)資料
型號: AMMC-6430-W50
元件分類: 放大器
英文描述: 25000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.100 X 0.074 INCH, 0.004 INCH HEIGHT, DIE
文件頁數(shù): 5/7頁
文件大?。?/td> 359K
代理商: AMMC-6430-W50
5
Biasing and Operation
The recommended quiescent DC bias condition for
optimumefficiency,performance,andreliabilityisVd=5
voltswithVgsetforId=950mA.Minorimprovementsin
performancearepossibledependingontheapplication.
Thedrainbiasvoltagerangeis3to5.5V.AsingleDCgate
supplyconnectedtoVgwillbiasallgainstages.Muting
can be accomplished by setting Vg and /or Vg to the
pinch-offvoltageVp.
An optional output power detector network is also
provided.ThedifferentialvoltagebetweentheDet-Ref
andDet-OutpadscanbecorrelatedwiththeRFpower
emergingfromtheRFoutputport.Thedetectedvoltage
isgivenby:
(
)
ofs
ref
V
=
det
where ref
V is the voltage at the
R
DET _ port, det
V is a
voltageatthe
O
DET _ port, and ofs
V isthezero-input-
power offset voltage. There are three methods to
calculate:
1. ofs
V canbemeasuredbeforeeachdetectormeasure-
ment(byremovingorswitchingoffthepowersource
andmeasuring).Thismethodgivesanerrordueto
temperaturedriftoflessthan0.01dB/50°C.
2. ofs
V canbemeasuredatasinglereferencetemperature.
Thedrifterrorwillbelessthan0.25dB.
3. ofs
V caneitherbecharacterizedovertemperatureand
storedinalookuptable,oritcanbemeasuredattwo
temperaturesandalinearfitusedtocalculateatany
temperature.Thismethodgivesanerrorclosetothe
method#1.
TheRFportsareACcoupledattheRFinputtothefirst
stageandtheRFoutputofthefinalstage.Noground
wired are needed since ground connections are made
withplatedthrough-holestothebacksideofthedevice.
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostripapplicationsthechipshouldbeattacheddirectly
tothegroundplane(e.g.circuitcarrierorheatsink)using
electricallyconductiveepoxy[1,2].
Forbestperformance,thetopsideoftheMMICshouldbe
broughtuptothesameheightasthecircuitsurrounding
it.Thiscanbeaccomplishedbymountingagoldplate
metalshim(samelengthandwidthastheMMIC)under
thechipwhichisofcorrectthicknesstomakethechip
and adjacent circuit the same height. The amount of
epoxyusedforthechipand/orshimattachmentshould
bejustenoughtoprovideathinfilletaroundthebottom
perimeterofthechiporshim.Thegroundplainshould
befreeofanyresiduethatmayjeopardizeelectricalor
mechanicalattachment.
The location of the RF bond pads is shown in Figure
12.NotethatalltheRFinputandoutputportsareina
Ground-Signalconfiguration.
RFconnectionsshouldbekeptasshortasreasonableto
minimizeperformancedegradationduetoundesirable
series inductance. A single bond wire is normally suf-
ficientforsignalconnections,howeverdoublebonding
with 0.7 mil gold wire or use of gold mesh is recom-
mendedforbestperformance,especiallynearthehigh
endofthefrequencyband.
Thermosonic wedge bonding is preferred method for
wire attachment to the bond pads. Gold mesh can be
attached using a 2 mil round tracking tool and a tool
forceofapproximately22gramsandaultrasonicpower
ofroughly55dBforadurationof76+/-8mS.Theguided
wedgeatanuntrasonicpowerlevelof64dBcanbeused
for0.7milwire.Therecommendedwirebondstagetem-
peratureis150+/-2°C.
Caution should be taken to not exceed the Absolute
MaximumRatingforassemblytemperatureandtime.
Thechipis100umthickandshouldbehandledwithcare.
ThisMMIChasexposedairbridgesonthetopsurfaceand
shouldbehandledbytheedgesorwithacustomcollet
(donotpickupthediewithavacuumondiecenter).
This MMIC is also static sensitive and ESD precautions
shouldbetaken.
Notes:
1. Ablebond84-1LM1silverepoxyisrecommended.
2. Eutecticattachisnotrecommendedandmayjeopardizereliability
ofthedevice.
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