參數(shù)資料
型號: AMMP-6408-TR1G
元件分類: 放大器
英文描述: 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 5 X 5 MM, SMT, 8 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 605K
代理商: AMMP-6408-TR1G
2
Absolute Maximum Ratings[1]
Symbol
Parameters[1]
Units
Value
Notes
Vd
PositiveSupplyVoltage
V
6
note2
Vg
GateSupplyVoltage
V
-3to0.5
Id
DrainCurrent
mA
900
PD
PowerDissipation
W
4.6
note2,3
Pin
CWInputPower
dBm
23
note2
Tch,max
MaximumOperatingChannelTemperature
°C
+55
note4,5
Tstg
StorageCaseTemperature
°C
-65to+55
Tmax
MaximumAssemblyTemp(20sec.max.)
°C
+260
Notes:
. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice.
2. Combinationsofsupplyvoltage,draincurrent,inputpower,andoutputpowershallnotexceedPD.
3. Whenoperatingatthisconditionwithabaseplatetemperatureof85°C,themediantimetofailure(MTTF)issignificantlyreduced.
4. TheseratingsapplytoeachindividualFET.
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintainedatthelowestpossiblelevels.
DC Specifications/Physical Properties
Symbol
Parameters and Test Conditions
Units
Value
Id
DrainSupplyCurrent(Vd=5V,VgsetforIdTypical)
mA
650
Vg
GateSupplyOperatingVoltage(Id(Q)=650(mA))
V
-.
Rqjc
ThermalResistance[6](Channel-to-BasePlate)
°C/W
20
Tch
ChannelTemperature
°C
50.6
Note:
6. AssumeSnPbsolderingtoanevaluationRFboardat80°Cbaseplatetemperatures.Worstcaseforthechanneltemperatureisunderthe
quiescentoperation.Atsaturatedoutputpower,DCpowerconsumptionrisesto4.26Wwith.4WRFpowerdeliveredtoload.Power
dissipationis3.Wandthetemperatureriseinthechannelis68.4°C.Inthiscondition,thebaseplatetemperaturemustberemainedbelow
86.6°Ctomaintainmaximumoperatingchanneltemperaturebelow55°C.
RF Specifications[1,2,3,4]
TA=25°C,Vd=5V,Id(Q)=650mA,Zo=50Ω
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq.
OperationalFrequency
GHz
6
8
Gain
Small-SignalGainS2[3,4]
dB
7.5(@Freq=8GHz)
5.5(@Freq=7GHz)
8
P-dB
OutputPoweratdB[3]
GainCompression[2]
dBm
28(@Freq=8GHz)
27(@Freq=7GHz)
28.5
P-3dB
OutputPowerat3dBGainCompression[3]
dBm
29.5
OIP3
ThirdOrderInterceptPoint;
f=00MHz;Pin=-20dBm
dBm
38
RLin
InputReturnLoss[2]
dB
3
RLout
OutputReturnLoss[2]
dB
9
Isolation
ReverseIsolation
dB
45
Notes:
.Small/large-signaldatameasuredinpackagedformona2.4mmconnecterbasedevaluationboardatTA=25°C.
2.Thisfinalpackagepartperformanceisverifiedbyafunctionaltestcorrelatedtoactualperformanceatoneormorefrequencies.
3.Specificationsarederivedfrommeasurementsina50Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera
narrowerbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching.
4.Preassemblyintopackageperformanceverified00%on-waferpublishedspecificationsatfrequencies=7,2,and7GHz.
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