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參數(shù)資料
| 型號： | AMMP-6522-TR2 |
| 元件分類： | 放大器 |
| 英文描述： | 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 7 X 5 MM, SURFACE MOUNT PACKAGE-8 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 618K |
| 代理商： | AMMP-6522-TR2 |
2
Absolute Maximum Ratings[1]
Symbol
Parameter and Test Condition
Unit
Max.
Vdd
DraintoGroundVoltage
V
5.5
Vg
GatetoGroundVoltage
V
+0.8
Idd
DrainCurrent
mA
100
Ig
GateCurrent
mA
1
Pin
RFCWInputPowerMax
dBm
10
Tch
Maxchanneltemperature
C
+150
Tstg
Storagetemperature
C
-65+150
Tmax
MaximumAssemblyTemp
C
300for60s
Note:
1.Operationinexcessofanyoftheseconditionsmayresultinpermanentdamagetothisdevice.
DC Specifications/ Physical Properties[2]
Symbol
Parameter and Test Condition
Unit
Min.
Typ.
Max.
Vdd
DrainSupplyVoltage
V
3
4
5
Idd
DrainSupplyCurrent(Vd=4.0V)
mA
75
95
Vg
GateSupplyVoltage(Ig=0.1mA)
V
-1.2
-1.0
-0.8
qjc
ThermalResistance(3)
C/W
27
RF Specifications[4,5,6]
TA=25°C,Z0=50Ω,Vdd=4.0V,Vg=-1V,LO=+15dBm,IF=2GHz
2. AmbientoperationaltemperatureTA=25°Cunlessnoted.
3. Channel-to-backsideThermalResistance(Tchannel=34°C)asmeasuredusinginfraredmicroscopy.ThermalResistanceatbackside
temp.(Tb)=25°Ccalculatedfrommeasureddata.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
CL
ConversionGain[5]
dB
12
13.5
NF
NoiseFigure[5]
dB
3.0
IIP3
InputThirdOrderInterceptRF:7-10GHz
RF:10-20GHz
dBm
-8
-5
IRR
ImageRejectionRatio
dB
15
RLLO
LOReturnLoss
dB
15
RLRF
RFReturnLoss
dB
12
4. Small/Large-signaldatameasuredinafullyde-embeddedtestfixtureformTA=25°C.
5. Thisfinalpackagepartperformanceisverifiedbyafunctionaltestcorrelatedtoactualperformanceatoneormorefrequencies.
6. Specificationsarederivedfrommeasurementsina50Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera
narrowerbandwidthbyapplicationofadditionalconjugate,linearity,orlownoise(
Gopt)matching.
7. Pre-assemblyintopackageperformanceverified100%on-waferpublishedspecifications.
8. UseIF=DCwithcaution.Pleasesee“BiasingandOperation”formoredetails.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
RFfreq
RFFrequency
GHz
7
20
LOfreq
LOFrequency
GHz
5
22
IFfreq
IFFrequency
GHz
DC[8]
3.5
LO
LODrivePower
dBm
+10
+15
+22
Operating Conditions
Alltestedparametersareguaranteedwiththefollowingmeasurementaccuracy:
RF=8GHz:
±0.6dBforConversionGain,±0.5dBforNF
RF=18GHz:
±1.8dBforConversionGain,±1.6dBforIRR,±0.6dBforNF
RF=7-10GHz: ±0.8dBmforIIP3
RF=10-20GHz: ±1.7dBmforIIP3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMP-6522-TR2G | 功能描述:射頻放大器 LNA IR Mixer 6-22GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMP-6530 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:5-30 GHz Image Reject Mixer |
| AMMP-6530-BLK | 功能描述:射頻混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMP-6530-TR1 | 功能描述:射頻混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMP-6530-TR2 | 功能描述:射頻混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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