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參數(shù)資料
| 型號： | AMMP-6530-BLK |
| 英文描述： | 5?30 GHz Image Reject Mixer |
| 中文描述： | 5？30千兆赫圖像抑制混頻器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 266K |
| 代理商： | AMMP-6530-BLK |
2
AMMP-6530 Typical Performance
[2, 3]
(T
A
= 25
°
C, V
g
=-1V, IF frequency=1 GHz, Z
o
=50
)
Symbol
Parameters and Test Conditions
Units
Gate Pumped
Drain Pumped
F
RF
RF Frequency Range
GHz
5
–
30
5
–
30
F
LO
LO Frequency Range
GHz
5
–
30
5
–
30
F
IF
IF Frequency Range
GHz
DC
–
5
DC
–
5
Down Conversion
Up Conversion
Down Conversion
P
LO
LO Port Pumping Power
dBm
>10
>0
>10
CG
RF to IF Conversion Gain
dB
-10
-15
-8
RL_RF
RF Port Return Loss
dB
5
5
10
RL_LO
LO Port Return Loss
dB
10
10
5
RL_IF
IF Port Return Loss
dB
10
10
10
IR
Image Rejection Ratio
dB
15
15
15
LO-RF Iso.
LO to RF Port Isolation
dB
22
25
22
LO-IF Iso.
LO to IF Port Isolation
dB
25
25
25
RF-IF Iso.
RF to IF Port Isolation
dB
15
15
15
IIP3
Input IP3, Fdelta=100 MHz,
Prf = -10 dBm, Plo = 15 dBm
dBm
18
—
10
P-1
Input Port Power at 1dB gain
compression point, Plo=+10 dBm
dBm
8
—
0
NF
Noise Figure
dB
10
—
12
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture form T
A
= 25
°
C.
3. Specifications are derived from measurements in a 50
test environment.
AMMP-6530 RF Specifications in Drain Pumped Test Configuration
[4, 5, 6, 7]
(T
A
= 25
°
C, V
g
= -1.0V, P
LO
=+10 dBm, Z
o
= 50
)
Symbol
Parameters and Test Conditions
Units
Typ.
Sigma
CG
Conversion Gain
dB
-8
0.5
IR
Image Rejection Ratio
dB
20
1.0
Notes:
4. Pre-assembly into package performance verified 100% on-wafer.
5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz.
6.
This final package part performance is verified by a functional test correlated to actual performance.
7.
The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0
–
2.0 GHz.
AMMP-6530 DC Specifications/Physical Properties
[1]
Symbol
Parameters and Test Conditions
Units
Typ.
I
g
Gate Supply Current (under any RF power drive and temperature)
mA
0
V
g
Gate Supply Operating Voltage
V
-1V
Note:
1. Ambient operational temperature T
A
=25
°
C unless otherwise noted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMMP-6530-TR1 | 5?30 GHz Image Reject Mixer |
| AMMP-6530-TR2 | 5?30 GHz Image Reject Mixer |
| AMO-HC1CSE40.0000MR | Peripheral IC |
| AMO-HC1CSE40.0000MT | PoE transformer, SMT, RoHS |
| AMO-HC1TSE40.0000MR | Peripheral IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMP-6530-TR1 | 功能描述:射頻混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMP-6530-TR2 | 功能描述:射頻混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| AMMP-6532-BLKG | 功能描述:射頻無線雜項(xiàng) LNA IR Mixer 20-33GHz RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| AMMP-6532-TR1G | 功能描述:射頻無線雜項(xiàng) LNA IR Mixer 20-33GHz RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| AMMP-6532-TR2G | 功能描述:射頻無線雜項(xiàng) LNA IR Mixer 20-33GHz RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
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