GAIN (G = 100 K/RGAIN<" />
參數(shù)資料
型號: AMP04FSZ-R7
廠商: Analog Devices Inc
文件頁數(shù): 11/16頁
文件大小: 0K
描述: IC AMP INST PREC 30MA LP 8SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 儀表
電路數(shù): 1
-3db帶寬: 700kHz
電流 - 輸入偏壓: 22nA
電壓 - 輸入偏移: 30µV
電流 - 電源: 750µA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 5 V ~ 30 V,±2.5 V ~ 15 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
AMP04
REV. B
–4–
AMP04E
AMP04F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy
G = 1 to 100
0.2
0.5
0.75
%
G = 1000
0.4
0.75
%
G = 1 to 100
–40
°C ≤ TA ≤ +85°C
0.8
1.0
%
Gain Range
G
1
1000
1
1000
V/V
Nonlinearity
G = 1, RL = 5 k
0.005
%
G = 10, RL = 5 k
0.015
%
G = 100, RL = 5 k
0.025
%
Gain Temperature Coefficient
G/T
30
50
ppm/
°C
OUTPUT
Output Voltage Swing High
VOH
RL = 2 k
13
13.4
13
V
RL = 2 k
–40
°C ≤ T
A
≤ +85°C
12.5
V
Output Voltage Swing Low
VOL
RL = 2 k
–40
°C ≤ TA ≤ +85°C
–14.5
–14.5 V
Output Current Limit
Sink
30
mA
Source
15
mA
NOISE
Noise Voltage Density, RTI
eN
f = 1 kHz, G = 1
270
nV/
√Hz
f = 1 kHz, G = 10
45
nV/
√Hz
f = 100 Hz, G = 100
30
nV/
√Hz
f = 100 Hz, G = 1000
25
nV/
√Hz
Noise Current Density, RTI
iN
f = 100 Hz, G = 100
4
pA/
√Hz
Input Noise Voltage
eN p-p
0.1 Hz to 10 Hz, G = 1
5
V p-p
0.1 Hz to 10 Hz, G = 10
1
V p-p
0.1 Hz to 10 Hz, G = 100
0.5
V p-p
DYNAMIC RESPONSE
Small Signal Bandwidth
BW
G = 1, –3 dB
700
kHz
POWER SUPPLY
Supply Current
ISY
750
900
A
–40
°C ≤ TA ≤ +85°C
1100
A
Specifications subject to change without notice.
WAFER TEST LIMITS
Parameter
Symbol
Conditions
Limit
Unit
OFFSET VOLTAGE
Input Offset Voltage
VIOS
300
V max
Output Offset Voltage
VOOS
3mV max
INPUT CURRENT
Input Bias Current
IB
40
nA max
Input Offset Current
IOS
10
nA max
INPUT
Common-Mode Rejection
CMR
0 V
≤ V
CM
≤ 3.0 V
G = 1
55
dB min
G = 10
75
dB min
G = 100
80
dB min
G = 1000
80
dB min
Common-Mode Rejection
CMR
VS =
±15 V, –12 V ≤ VCM ≤ +12 V
G = 1
55
dB min
G = 10
75
dB min
G = 100
80
dB min
(VS = 5 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)
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