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參數(shù)資料
| 型號(hào)： | AN644 |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz |
| 中文描述： | QuickChip設(shè)計(jì)示例2低功耗硅晶體管的1.9GHz的低噪聲放大器 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | AN644 |
2
large chip
containing the LNA. In Fig. 6 the chip can be seen as mounted on the substrate and
bonded to the printed input and output matching inductors.
Figure 6. Photograph of the Quickchip mounted on the test substrate. On the right are
the printed inductors for input and output matching.
IV Conclusions
A silicon bipolar low power LNA for 1.9GHz has been designed and tested. It shows a noise
figure of 2.3dB along with a 15dB gain. The power consumption is only 5.2mW resulting in a
high gain/DC-power figure of merit of 2.9dB/mW. The design was done on a transistor array
showing almost no performance degradation relative to full custom design.
V Acknowledgement
The authors wish to acknowledge MAXIM for providing access to their GST-2 Quickchip
technology.
References
[1] Heaney, F. McGrath, P. O'Sullivan, C. Kermarrec, "Ultra low power low noise amplifiers
for wireless communications", IEEE 1993 GaAs IC Symposium, pp. 49 - 51
[2] M. Nakatsugawa, Y. Yamaguchi, M. Muraguchi, "An L-band ultra low power consumption
monolithic low noise amplifier", IEEE 1993 GaAs IC Symposium, pp. 1745 - 1750
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