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參數(shù)資料
| 型號(hào)： | AO3413 |
| 廠(chǎng)商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | AO3413 |
AO3413
20V P-Channel MOSFET
-15
Features
V
DS = -20V
I
D = -3A
(V
GS = -4.5V)
R
DS(ON) < 80m
(V
GS =- 4.5V)
R
DS(ON) < 100m
(V
GS = -2.5V)
R
DS(ON) < 130m
(V
GS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
t ≤ 10s
70
90
Steady-State
100
125
Steady-State
RθJL
63
80
-15
A
PD
Power Dissipation
A
TA=25°C
TA=70°C
ID
Pulsed Drain Current
B
Maximum
Parameter
Units
-20
±8
°C
-55 to 150
Continuous Drain
Current
A
-3
-2.4
Maximum Junction-to-Lead
C
°C/W
Units
Maximum Junction-to-Ambient
A
RθJA
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
Gate-Source Voltage
Drain-Source Voltage
Parameter
°C/W
Maximum Junction-to-Ambient
A
0.9
°C/W
W
Junction and Storage Temperature Range
TA=70°C
Thermal Characteristics
1.4
Features
V
DS = -20V
I
D = -3A
(V
GS = -4.5V)
R
DS(ON) < 80m
(V
GS =- 4.5V)
R
DS(ON) < 100m
(V
GS = -2.5V)
R
DS(ON) < 130m
(V
GS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
Rev 9: July 2010
www.aosmd.com
Page 1 of 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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