參數(shù)資料
型號: AO4413
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, SOIC-8
文件頁數(shù): 2/6頁
文件大小: 561K
代理商: AO4413
AO4413
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1.5
-2.5
-3.5
V
ID(ON)
-120
A
5.3
7
TJ=125°C
7.5
9
6.4
8.5
m
gFS
35
S
VSD
-0.7
-1
V
IS
-4
A
Ciss
2310
2890
3500
pF
Coss
410
585
760
pF
Crss
280
470
660
pF
Rg
1.9
3.8
5.7
Qg
40
51
61
nC
Qgs
10
12
14
nC
Qgd
10
16
22
nC
tD(on)
16
ns
tr
12
ns
t
45
ns
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0,
R
=3
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-15A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
IS=-1A,VGS=0V
VDS=-5V, ID=-15A
VGS=-10V, ID=-15A
Forward Transconductance
Diode Forward Voltage
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
A
VDS=VGS ID=-250A
VDS=0V, VGS= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VGS=-20V, ID=-15A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
tD(off)
45
ns
tf
22
ns
trr
14
18
22
ns
Qrr
9
11
13
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s
IF=-15A, dI/dt=100A/s
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 9: Jan 2010
www.aosmd.com
Page 2 of 6
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