參數(shù)資料
型號(hào)： AO4718
廠商： ALPHA AND OMEGA SEMICONDUCTOR
元件分類： JFETs
英文描述： 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： GREEN, SOIC-8
文件頁數(shù)： 2/5頁
文件大小： 187K
代理商： AO4718
AO4718
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.1
TJ=125°C
10
IGSS
0.1
A
VGS(th)
Gate Threshold Voltage
1.3
1.65
2.5
V
ID(ON)
80
A
7.3
9
TJ=125°C
10.3
13
10.8
14
m
gFS
43
S
VSD
0.41
0.5
V
IS
4
A
Ciss
1620
1950
pF
Coss
382
pF
Crss
162
pF
Rg
1.2
1.8
Qg(10V)
24.7
32
nC
Qg(4.5V)
12
16
nC
Qgs
4.0
nC
Qgd
5.6
nC
tD(on)
6.3
ns
tr
9.3
ns
tD(off)
21.6
ns
tf
5.4
ns
trr
19
23
ns
Qrr
36.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250uA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=15A
Reverse Transfer Capacitance
IF=15A, dI/dt=300A/s
VDS=VGS ID=250A
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
Zero Gate Voltage Drain Current
mA
VDS=0V, VGS= ±20V
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=12A
IS=1A,VGS=0V
VDS=5V, ID=15A
Turn-On Rise Time
Total Gate Charge
VGS=10V, VDS=15V, ID=15A
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev3: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料
PDF描述
AOD4185 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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AOD472 55 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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