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參數(shù)資料
| 型號： | AO6400 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | LJT 55C 55#22D PIN RECP |
| 中文描述： | N溝道增強模式場效應晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 315K |
| 代理商： | AO6400 |
AO6400
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1.4
nA
V
A
0.7
35
1.1
22.3
31.5
26.8
42.8
15
0.71
28
39
33
52
T
J
=125°C
m
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
10
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
823
99
77
1.2
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
9.6
1.65
3
5.5
5.1
37
4.2
16
8.9
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=5A, dI/dt=100A/
μ
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
I
F
=5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=5.8A
V
GS
=10V, V
DS
=15V, R
L
=2.7
,
R
GEN
=6
m
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6.9A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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