參數(shù)資料
型號: AOD414L
廠商: Electronic Theatre Controls, Inc.
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 1/5頁
文件大?。?/td> 111K
代理商: AOD414L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
14.2
40
0.56
Max
20
50
1.5
R
θ
JL
Junction and Storage Temperature Range
-55 to 175
mJ
W
50
2.5
1.6
W
°C
Repetitive avalanche energy L=0.1mH
C
140
100
Power Dissipation
A
A
I
D
Avalanche Current
C
30
A
200
Continuous Drain
Current
B,G
Pulsed Drain Current
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
G
T
C
=100°C
B
85
73
T
A
=25°C
T
A
=70°C
P
DSM
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Gate-Source Voltage
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOD414, AOD414L( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 4:Nov 2004
Features
V
DS
(V) = 30V
I
D
= 85A
R
DS(ON)
< 5.2m
(V
GS
= 10V)
R
DS(ON)
< 7.0m
(V
GS
= 4.5V)
General Description
The AOD414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOD414L ( Green Product ) is
offered in a lead-free package.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
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