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參數(shù)資料
| 型號(hào)： | AOI4185 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | GREEN, TO-251A, IPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 300K |
| 代理商： | AOI4185 |
AOD4185/AOI4185
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.7
-1.9
-3
V
ID(ON)
-115
A
12.5
15
TJ=125°C
19
23
16
20
gFS
50
S
VSD
-0.72
-1
V
IS
-20
A
Ciss
2550
pF
Coss
280
pF
Crss
190
pF
Rg
2.5
4
6
Qg (-10V)
42
55
nC
Qg (-4.5V)
18.6
Qgs
7nC
Qgd
8.6
nC
tD(on)
9.4
ns
tr
20
ns
tD(off)
55
ns
tf
30
ns
trr
38
49
ns
Qrr
47
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current
Body Diode Reverse Recovery Time
VGS=-10V, ID=-20A
Reverse Transfer Capacitance
IF=-20A, dI/dt=100A/s
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Drain-Source Breakdown Voltage
ID=-250A, VGS=0V
VDS=-40V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Zero Gate Voltage Drain Current
IS=-1A,VGS=0V
VDS=-5V, ID=-20A
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=-250A
On state drain current
VGS=-10V, VDS=-5V
VDS=0V, VGS= ±20V
Maximum Body-Diode Continuous Current
Input Capacitance
m
Turn-On Rise Time
Gate Drain Charge
VGS=0V, VDS=-20V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, ID=-15A
Turn-Off DelayTime
VGS=-10V, VDS=-20V, RL=1,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
TBD
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V,
ID=-20A
TBD
Total Gate Charge
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
ST 2008).
Rev3: Oct 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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