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參數(shù)資料
| 型號(hào)： | AOL1718 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 90 A, 30 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, ULTRASO-8, 3 PIN |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | AOL1718 |
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
26
28
30
32
34
36
38
0
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Q
rr
(n
C
)
0
2
4
6
8
10
12
I r
m
(A
)
di/dt=800A/
s
125C
25C
Qrr
Irm
0
5
10
15
20
25
30
35
0
200
400
600
800
1000
di/dt (A/
s)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(n
C
)
0
2
4
6
8
10
I r
m
(A
)
125C
25C
Is=20A
Qrr
Irm
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t r
r
(n
s
)
0
0.5
1
1.5
2
2.5
3
S
di/dt=800A/
s
125C
25C
trr
S
0
3
6
9
12
15
18
21
24
0
200
400
600
800
1000
di/dt (A/
s)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t r
r
(n
s
)
0
0.5
1
1.5
2
2.5
S
125C
25C
125
Is=20A
trr
S
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
I R
(A
)
VDS=15V
VDS=30V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
V
S
D
(V
)
IS=1A
10A
20A
5A
Rev 2: April 2011
www.aosmd.com
Page 6 of 7
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