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參數(shù)資料
| 型號(hào)： | AP04N20GK-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | AP04N20GK-HF |
AP04N20GK-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja = 120℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
024
68
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =1A
V DS =160V
0
100
200
300
400
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
Operation in this
area limited by
RDS(ON)
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