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參數(shù)資料
| 型號： | AP05N20GI-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 200 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | AP05N20GI-HF |
AP05N20GI-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
200V
▼ Lower Gate Charge
RDS(ON)
560mΩ
▼ Fast Switching Characteristics
ID
5.8A
▼ RoHS Compliant & Halogen-Free
Description
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
PD@TA=25℃
Total Power Dissipation
W
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃/W
Rthj-a
65
℃/W
Data & specifications subject to change without notice
-55 to 150
1.92
Halogen-Free Product
201012291
1
Maximum Thermal Resistance, Junction-ambient
Parameter
Rating
200
5.8
3.7
-55 to 150
Parameter
+20
Storage Temperature Range
20
28
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
G
D
S
TO-220CFM(I)
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