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參數(shù)資料
| 型號(hào)： | AP0903GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | AP0903GM-HF |
AP0903GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
024
68
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15 V
V DS =18 V
V DS =24 V
I D =12 A
0
200
400
600
800
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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| AP0903GYT-HF | 16 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| AP09N20BGP-HF | 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP0903GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Dissipation |
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| AP0904GJB-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
| AP0904GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP0904GMT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible with Heatsink |
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