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參數(shù)資料
| 型號： | AP1002BMX |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 30 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN AND LEAD FREE, GREENFET PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | AP1002BMX |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lead-Free Package
BVDSS
30V
▼ Low Conductance Loss
RDS(ON)
1.8mΩ
▼ Low Profile ( < 0.7mm )
ID
32A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
ID@TC=25℃
A
IDM
A
PD@TA=25℃
W
PD@TA=70℃
W
PD@TC=25℃
W
EAS
mJ
IAR
A
TSTG
℃
TJ
℃
Rthj-c
Maximum Thermal Resistance, Junction-
case
4
1.4
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
45
℃
/W
Data and specifications subject to change without notice
30
Gate-Source Voltage
+20
-40 to 150
Avalanche Current
1
201008094
1
Thermal Data
Storage Temperature Range
Operating Junction Temperature Range
Total Power Dissipation
3
Total Power Dissipation
4
Continuous Drain Current, VGS @ 10V
4
Total Power Dissipation
3
Single Pulse Avalanche Energy
5
180
28.8
2.8
25
32
1.8
-40 to 150
24
89
AP1002BMX
Pulsed Drain Current
1
250
Continuous Drain Current, VGS @ 10V
3
Continuous Drain Current, VGS @ 10V
3
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
G
D
S
The AP1002BMX used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFET
TM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
GreenFET
TM
MX
G
S
DD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP1003BST | 17.3 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| AP1005BSQ | 19 A, 25 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP10N60W | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP1203AGMT-HF | 15.8 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
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