參數(shù)資料
型號(hào): AP1203GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 37 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 97K
代理商: AP1203GH
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=20A
-
12
m
VGS=4.5V, ID=15A
-
22
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
27
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=20A
-
6.7
10.5
nC
Qgs
Gate-Source Charge
VDS=24V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.3
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6.5
-
ns
tr
Rise Time
ID=20A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
15
-
ns
tf
Fall Time
RD=0.75Ω
-5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=25V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.3
5
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=20A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP1203GH
2
3.Surface mounted on 1 in
2 copper pad of FR4 board
相關(guān)PDF資料
PDF描述
AP124-93 1700 MHz - 1900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
AP124-93 1700 MHz - 1900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
AP1322GEU 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AP13N50I-HF 14 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP13N50R-HF 14 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP1203GMA 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP-1205G-F2-LF 制造商:DAILY WIN MANUFACTURE 功能描述:
AP120-89 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Amplifier
AP-121 功能描述:PLUG AUTO LOCKING BLACK W/LED RoHS:是 類別:電池產(chǎn)品 >> 點(diǎn)煙器配件 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 類型:汽車插頭 技術(shù)規(guī)格:ABS,帶保險(xiǎn)絲,LED 指示燈,旋轉(zhuǎn)式,開關(guān) 額定電流:5A 顏色:黑 電壓 - 額定:12V 其它名稱:Q3133546
AP12-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC