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參數(shù)資料
| 型號： | AP121-89 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SSOP-16 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | AP121-89 |
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 3/99A
GaAs IC 3 Stage GSM Power Amplifier
Features
■ +3.5 V Operation
■ Output Power of 35 dBm
■ Efficiency Typically 55%
■ Outstanding Efficiency vs. Supply Voltage
■ High Power SSOP-16 Package with
Exposed Pad
■ Wide Power Control Range (70 dB)
■ Designed to work with AP122-89 as a
Dualband Solution
SSOP-16 with Exposed Pad
AP121-89
Description
The AP121-89 is a low cost IC power amplifier designed for
the 880–915 MHz frequency band. It features single supply,
3.5 V battery operation and exceptional efficiency. Drive level
requirements are minimized with 3 stages of amplification,
thereby reducing the cost of the VCO. The AP121-89 is
designed to be stable over a temperature range of -40 to
+85°C and over a 10:1 output VSWR load. External
matching is used for improved performance and flexibility.
0.197 (5.00 mm)
0.189 (4.80 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
0.244
(6.20 mm)
0.228
(5.80 mm)
0.025
(0.635 mm) TYP.
PIN 1
PIN 16
0.063
(1.60 mm) MAX.
0.004 (0.10 mm)
0.000 (0.00 mm)
0.095 (2.42 mm)
0.085 (2.16 mm)
EXPOSED
PAD
0.12 (0.30 mm)
0.008 (0.20 mm)
0.135 (3.43 mm)
0.125 (3.17 mm)
Preliminary
Quantity
Value
Unit
Amplifier Supply Voltage (VDS)10
V
Input RF Power (PIN)
14
dBm
Duty Cycle
50
%
Operating Temperature (TOP)
-40 to +85
°C
Storage Temperature (TST)
-65 to +150
°C
Absolute Maximum Ratings
Output Matching Circuit
The output match for the AP121-89 is provided externally
in order to improve performance, reduce cost, and add
flexibility. By making use of ceramic surface mount
components with better Qs than GaAs matching
elements, a lower loss matching network can be made.
This lower loss results in higher power and efficiency for
the amplifier. Also, by keeping these elements external the
GaAs die size is reduced and the overall cost is less. This
approach also permits the flexibility to tweak the amplifier
for optimum performance at different powers, and/or
frequencies.
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