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參數(shù)資料
| 型號(hào)： | AP18P10GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.7 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | AP18P10GM-HF |
AP18P10GM-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
0
4
8
12
16
20
24
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
0
4
8
12
16
20
0246
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
T A = 150
o C
120
130
140
150
160
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =- 2 A
T A =25 ℃
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =- 2 A
V G =-10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
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