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參數(shù)資料
| 型號(hào)： | AP1L3N-AZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 104K |
| 代理商： | AP1L3N-AZ |
Data Sheet D16171EJ1V0DS
3
AP1 SERIES
AP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
200
470
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
300
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
50
200
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.2 A
0.2
0.4
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.65
0.3
V
Input resistance
R1
2.3
3.3
4.3
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
300
600
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
300
700
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
135
600
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.15 A
0.14
0.3
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
2.31
3.3
4.29
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
200
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.15 A
0.45
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
3.29
4.7
6.11
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
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相關(guān)代理商/技術(shù)參數(shù) |
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