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參數(shù)資料
| 型號： | AP20GT60SW |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 60K |
| 代理商： | AP20GT60SW |
Fig7. Power Dissipation vs. Junction
Fig 8. Effective Transient Thermal
Temperature
Impedance
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
Fig 11. Forward Characteristic of
Fig 12. Turn-off SOA
Diode
3
AP20GT60SW
0
5
10
15
20
04
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C =60 A
40 A
20 A
T C =25
o C
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C =60 A
40 A
20 A
T C = 150
o C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2
2.4
V F , Forward Voltage (V)
I
F
,Forward
Cu
rre
n
t(
A
)
T j =25
o C
T j =150
o C
0
40
80
120
160
0
50
100
150
200
Junction Temperature (
o C )
Powe
rD
issipation
(
W
)
1
100
0.1
1
10
100
1000
10000
V CE ,Collector-Emitter Voltage(V)
I
C
,Pe
ak
C
o
lle
c
tor
C
u
rre
n
t(
A
)
V GE =15V
T C =125
o C
Safe Operating Area
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|---|---|
| AP20GT60W | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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