參數(shù)資料
型號: AP2304AGN-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/5頁
文件大?。?/td> 110K
代理商: AP2304AGN-HF
AP2304AGN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
0123
456
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
So
urce
Vo
lta
g
e(
V
)
I D =2.5A
V DS =24V
V DS =20V
V DS =15V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lized
T
herm
a
lResp
o
nse
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
t
T
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
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