參數(shù)資料
型號： AP2305GN-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 4.2 A, 20 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/4頁
文件大?。?/td> 94K
代理商： AP2305GN-HF
AP2305GN-HF
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -4.2A
V GS = -4.5V
0
4
8
12
16
20
012
345
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T A =25
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.5V
0
4
8
12
16
20
012
34
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
V G = -1.5V
-5.0V
-4.5V
-3.5V
-2.5V
T A = 150
o C
0
2
4
6
8
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
40
42
44
46
48
50
52
12
345
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-4.2A
T A =25
o C
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