參數(shù)資料
型號： AP2306N
廠商： Electronic Theatre Controls, Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 1/4頁
文件大小： 72K
代理商： AP2306N
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Capable of 2.5V gate drive
Lower on-resistance
Surface mount package
BV
DSS
R
DS(ON)
I
D
20V
32m
Ω
5.3A
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
90
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
200509032
AP2306N
Parameter
Rating
20
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,2
5.3
4.3
10
1.38
0.01
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
±
12
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
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