參數(shù)資料
型號(hào)： AP2332GN-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號(hào)晶體管
英文描述： 27 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 91K
代理商： AP2332GN-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
600
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=16mA
-
300
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=16mA
-
28
-
mS
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=0.1A
1.8
2.5
3.2
nC
Qgs
Gate-Source Charge
VDS=200V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=300V
-
11.5
-
ns
tr
Rise Time
ID=10mA
-
14.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3,VGS=10V
-
14
-
ns
tf
Fall Time
RD=30kΩ
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
8.8
12.5
16.2
pF
Coss
Output Capacitance
VDS=25V
7
10
13
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
5
7
9
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=0.05A, VGS=0V
-
1.5
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2332GN-HF
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