參數(shù)資料
型號(hào): AP25P15GI
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 23 A, 140 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 96K
代理商: AP25P15GI
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP25P15GI
Q
VG
-10V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
2040
6080
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = -80 V
I D = -18 A
10
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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