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參數(shù)資料
| 型號： | AP2607GY-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP2607GY-HF |
AP2607GY-HF
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -5A
V GS = -4.5V
0
4
8
12
16
20
012
34
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T A =25
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
0
4
8
12
16
20
01
2345
6
7
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
V G = -2.0V
-5.0V
-4.5V
-3.5V
-2.5V
T A = 150
o C
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
I D =-4.2A
T A =25
o C
30
40
50
60
70
01
23
45
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-4A
T A =25
o C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP2608AGK-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2608AGY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2608GY | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2609GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP2609GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
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