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參數(shù)資料
| 型號(hào)： | AP2625GY |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2 A, 30 V, 0.185 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | AP2625GY |
APTGF400U120D4G
APT
G
F400U120D4G
–
Rev0
July,
2008
www.microsemi.com
5- 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
0
200
400
600
800
00.5
1
1.522.5
3
VF (V)
I F
(A
)
ZCS
hard
switching
ZVS
0
10
20
30
40
50
60
70
0
100
200
300
400
500
IC (A)
F
m
ax,
O
p
erating
F
req
uency
(kHz
)
VCE=600V
D=50%
RG=2.2
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Ther
m
a
lIm
pedanc
e
(°C
/W)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2625Y | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Smaller Outline Package |
| AP2648 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Analog IC |
| AP26G40GEO-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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