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參數(shù)資料
| 型號(hào)： | AP2763I-A |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 750 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大小： | 131K |
| 代理商： | AP2763I-A |
Data Sheet D15387EJ1V0DS
3
2SK3507
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Pe
rcentage
of
Rated
Powe
r-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
P
T-
Total
Powe
r
Dissipation
-
W
0
10
20
30
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Dr
ain
Cur
rent
-
A
0.1
1
10
100
0.1
1
10
100
ID(pulse)
TC = 25°C
Single pulse
10 ms
Power Dissipation Limited
ID(DC)
PW = 10
s
1 ms
DC
100
s
RDS(on) Limited
(at VGS = 10 V)
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient
T
hermal
Resistance
-
°C/W
0.01
0.1
1
10
100
1000
Single pulse
Rth(ch-C) = 6.25°C/W
Rth(ch-A) = 83.3°C/W
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
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| AP2763W-A | 8 A, 750 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2764AI-HF | 9 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2765I-A-HF | 8 A, 650 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2763W-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2764AI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2764AI-A-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2764AI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2764AP-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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