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參數(shù)資料
| 型號(hào)： | AP2N7002K-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | AP2N7002K-HF |
AP2N7002K-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G = 3.0 V
0.0
0.2
0.4
0.6
0.8
1.0
02
46
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G = 3.0 V
1.0
1.5
2.0
2.5
3.0
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = 200m A
T A =25
o C
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = 450m A
V G =10V
0
0.2
0.4
0.6
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.5
0.9
1.3
1.7
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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| AP2N7002K-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 60V 2OHM SOT-23 |
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