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參數(shù)資料
| 型號(hào)： | AP30N30WI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PF, FULL PACK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 111K |
| 代理商： | AP30N30WI |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
30
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
201216053-1/4
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP30N30WI
0
4
8
12
16
0
20406080
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = 120 V
V DS = 160 V
V DS = 200 V
I D =15 A
Q
VG
10V
QGS
QGD
QG
Charge
1
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
40
02
46
8
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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