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參數(shù)資料
| 型號(hào)： | AP30P10GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 151K |
| 代理商： | AP30P10GI |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
80mΩ
▼ Fast Switching Characteristic
ID
-25A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃
/W
Data and specifications subject to change without notice
200812232
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
1
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Thermal Data
Parameter
Pulsed Drain Current
1
-80
-55 to 150
31.3
Total Power Dissipation
AP30P10GI
Rating
-100
±20
-25
RoHS-compliant Product
-15
G
D
S
G
D
S
TO-220CFM(I)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
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