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參數(shù)資料
| 型號(hào)： | AP3310GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 105K |
| 代理商： | AP3310GH |
AP3310GH/J
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
0
2
4
6
8
10
25
50
75
100
125
150
T c , Case Temperature (
o C)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
0
5
10
15
20
25
30
0
50
100
150
T c , Case Temperature (
o C)
P
D
(W
)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
1
10
100
1
10
100
-V DS (V)
-I
D
(A
)
T C =25 °C
Single Pulse
1ms
10ms
100ms
DC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP3310GJ | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP3310GJ-HF | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP3310GH-HF | 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP3405GH-HF | 8.6 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP34M60B | 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP3310GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, 2.5V Gate Drive Capability |
| AP3310GHJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Simple Drive Requirement |
| AP3310H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP3310J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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