參數(shù)資料
型號: AP3989I
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 59K
代理商: AP3989I
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
600V
▼ Simple Drive Requirement
RDS(ON)
0.68Ω
▼ Fast Switching Characteristic
ID
10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
AP3989I
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
600
Gate-Source Voltage
+30
Continuous Drain Current, VGS @ 10V
10
50
10
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
5
Pulsed Drain Current
1
40
Total Power Dissipation
39
-55 to 150
Operating Junction Temperature Range
-55 to 150
200907232
Thermal Data
Parameter
1
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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