參數(shù)資料
型號(hào)： AP4002S
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 184K
代理商： AP4002S
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
600V
▼ Fast Switching Characteristics
RDS(ON)
5Ω
▼ Simple Drive Requirement
ID
2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
6.25
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
RoHS-compliant Product
201019072-1/4
AP4002S/P
-55 to 150
Parameter
20
Parameter
Rating
600
±30
Storage Temperature Range
-55 to 150
8
20
Linear Derating Factor
0.16
2
G
D
S
G
D
S
TO-263(S)
G
D
S
TO-220(P)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for power applications.The
through-hole version (AP4002P) are available for low-profile applications.
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