參數(shù)資料
型號： AP4002T
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號晶體管
英文描述： 400 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 109K
代理商： AP4002T
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
600V
▼ Fast Switching Characteristics
RDS(ON)
5Ω
▼ Simple Drive Requirement
ID
400mA
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TL=25℃
Continuous Drain Current, VGS @ 10V
mA
IDM
Pulsed Drain Current
1
A
PD@TL=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
150
℃/W
Rthj-l
Maximum Thermal Resistance, Junction-lead
60
℃/W
Data & specifications subject to change without notice
-55 to 150
20
400
Linear Derating Factor
Storage Temperature Range
Parameter
Rating
600
±30
Parameter
201019072-1/4
AP4002T
-55 to 150
2
3
2
RoHS-compliant Product
0.017
G
D
S
TO-92
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
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參數(shù)描述
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