參數(shù)資料
型號(hào)： AP40P03GP
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù)： 4/5頁
文件大小： 117K
代理商： AP40P03GP
APTGF15X120T3G
A
P
TG
F15X120T3G
–
R
ev
0
J
uly,
2007
www.microsemi.com
4- 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
0123
45678
Ic
,C
o
ll
ec
to
rC
u
rr
en
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
2
4
6
8
10
12
14
16
0
0.5
1
1.5
2
2.5
3
3.5
Ic
,Col
lecto
r
C
u
rr
ent
(A)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
02.557.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Ic
,Col
lecto
r
C
u
rr
ent
(A)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100
120
Gate Charge (nC)
V
GE
,Gate
to
E
m
itter
Vo
lt
age
(V
)
IC = 15A
TJ = 25°C
Ic=30A
Ic=15A
Ic=7.5A
0
1
2
3
4
5
6
7
8
9
101112
13141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
,C
o
ll
ec
to
rt
o
Emit
te
rVo
lt
ag
e
(V
)
TJ = 125°C
250s Pulse Test
< 0.5% Duty cycle
Ic=30A
Ic=15A
Ic=7.5A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
V
CE
,Col
lector
to
E
m
it
ter
V
o
lt
ag
e
(V
)
On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
C
o
lle
ct
or
t
o
Em
it
te
rB
re
ak
d
o
w
n
V
o
lt
ag
e
(N
or
m
aliz
ed
)
Breakdown Voltage vs Junction Temp.
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
Ic
,D
C
o
ll
ec
to
r
C
u
rr
en
t(
A
)
DC Collector Current vs Case Temperature
相關(guān)PDF資料
PDF描述
AP40T10GR 40 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP40U03GH 20 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP4224AGM 9.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP4232BGM-HF 7.6 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP4407GS 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP40SD 功能描述:整流器/與可變電容器 250Volts 1.5pF-40pF RoHS:否 制造商:Xicon 電容范圍:2.8 pF to 12.5 pF 容差: 電壓額定值:200 V 工作溫度范圍:- 35 C to + 85 C 端接類型:SMD/SMT 產(chǎn)品:Trimmer Capacitors - Ceramic Dielectric
AP40T03GH 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GH_08 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GH-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 25MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:31.25W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai
AP40T03GI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*