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參數(shù)資料
| 型號(hào)： | AP4407GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 218K |
| 代理商： | AP4407GS |
AP4407GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
50
100
150
200
250
01234
5678
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
10
15
20
25
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D = -16 A
T C =25 ℃
0
50
100
150
01234
5678
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
T C =150
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-24A
V G =-10V
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V)
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| AP4416GH | 20 A, 35 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4407I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Fast Switching Characteristic |
| AP4407M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4407P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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