參數(shù)資料
型號: AP4420GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 52 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 93K
代理商: AP4420GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
35V
▼ Simple Drive Requirement
RDS(ON)
10mΩ
▼ Fast Switching Characteristic
ID
52A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200703061-1/4
Total Power Dissipation
Thermal Data
Parameter
Linear Derating Factor
0.35
Storage Temperature Range
Operating Junction Temperature Range
Continuous Drain Current
33
Pulsed Drain Current
1
200
Gate-Source Voltage
±20
Continuous Drain Current
52
Parameter
Rating
Drain-Source Voltage
35
-55 to 150
AP4420GH/J
Pb Free Plating Product
45
G
D
S
TO-252(H)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4420GJ) are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
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