參數(shù)資料
型號(hào): AP4427GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 16 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 197K
代理商: AP4427GM
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
35
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7.5A
-
6.6
m
VGS=4.5V, ID=7.5A
-
10
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
2.3
V
gfs
Forward Transconductance
VDS=10V, ID=7.5A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=30V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
+100
nA
Qg
Total Gate Charge
2
ID=15A
-
35
56
nC
Qgs
Gate-Source Charge
VDS=24V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
22
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
13
-
ns
tr
Rise Time
ID=7.5A
-
24
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
39
-
ns
tf
Fall Time
RD=2Ω
-17
-
ns
Ciss
Input Capacitance
VGS=0V
-
2850 4560
pF
Coss
Output Capacitance
VDS=10V
-
890
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
635
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.8
1.2
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.9A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=7.5A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2
AP4427GM
相關(guān)PDF資料
PDF描述
AP4455GEYT-HF 30 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET
AP4502AGM-HF 20 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP4509GM 10 A, 30 V, 0.014 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP4511GH-A 8.6 A, 35 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
AP4523GH 13 A, 40 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP4428GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Characteristic
AP4429GM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Ultra_Low On-resistance, Simple Drive Requirement
AP4430GEM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Characteristic
AP4430GM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Ultra_Low On-resistance, Simple Drive Requirement
AP443-28146-2 制造商:Sensata Technologies 功能描述:AP443-28146-2 /Pole # 3 /Prod Family: 0202