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參數(shù)資料
| 型號： | AP4439GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 13.3 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 93K |
| 代理商： | AP4439GM-HF |
AP4439GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
1000
2000
3000
4000
5000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
0
2040
6080
100
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -12A
V DS = -15V
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this
area limited by
RDS(ON)
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