參數(shù)資料
型號(hào)： AP4501CGM-HF
廠(chǎng)商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 7 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 7/7頁(yè)
文件大?。?/td> 120K
代理商： AP4501CGM-HF
AP4501CGM-HF
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
30
-30
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0.0
2.0
4.0
6.0
8.0
10.0
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V)
I D = -4A
V DS = -25V
0
100
200
300
400
500
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
相關(guān)PDF資料
PDF描述
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