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參數(shù)資料
| 型號(hào)： | AP4511GH-A |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.6 A, 35 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 152K |
| 代理商： | AP4511GH-A |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
35
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=8A
-
27
mΩ
VGS=4.5V, ID=5A
-
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
2.5
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
13
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=35V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=28V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=8A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=8A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
AP4511GH-A
2/7
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