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參數(shù)資料
| 型號： | AP4521GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AP4521GEM |
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
AP4521GEM
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
0.0
4.0
8.0
12.0
16.0
Q G , Total Gate Charge (nC)
-V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
I D =-4A
V DS =-30V
10
100
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0
5
10
15
20
02
46
-V GS , Gate-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS =-5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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