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參數(shù)資料
| 型號： | AP4527GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.6 A, 40 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 192K |
| 代理商： | AP4527GH |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
52
mΩ
VGS=-4.5V, ID=-3A
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-10
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-4A
-
8
13
nC
Qgs
Gate-Source Charge
VDS=-32V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
8.6
-
ns
tr
Rise Time
ID=-4A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
23
-
ns
tf
Fall Time
RD=5Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
850
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
7.5
12
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-2.4A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-4A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP4527GH
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
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相關(guān)代理商/技術(shù)參數(shù) |
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