參數(shù)資料
型號: AP4528GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 5.8 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 3/8頁
文件大?。?/td> 205K
代理商: AP4528GM
AP4528GM
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-10mA
-40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
60
VGS=-4.5V, ID=-3A
-
98
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-4A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-4A
-
8
14
nC
Qgs
Gate-Source Charge
VDS=-30V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
9.5
-
ns
tr
Rise Time
ID=-1A
-
6.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=20Ω
-
8.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
850
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-1.5A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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