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參數(shù)資料
| 型號(hào)： | AP4533GEM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 84K |
| 代理商： | AP4533GEM-HF |
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=8A
-
18
mΩ
VGS=4.5V, ID=6A
-
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+30
uA
Qg
Total Gate Charge
2
ID=8A
-
6.5
10.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.3
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=15Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
540
860
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
2
AP4533GEM-HF
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| AP4543GEH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
| AP4543GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Performance |
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